ALPHA-PARTICLE-INDUCED FAILURE MODES IN DYNAMIC RAMS

被引：7

作者：

CARTER, PM

WILKINS, BR

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 01期

关键词：

D O I：

10.1049/el:19850029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：38 / 39

页数：2

共 9 条

[1]

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[2]

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WOODS, MH .

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[4]

MAY TC, 1980, IEEE TEST C, P137

[5]

McPartland R. J., 1980, 18th Annual Proceedings of Reliability Physics, P261, DOI 10.1109/IRPS.1980.362951

[6] ALPHA-PARTICLE-INDUCED SOFT ERROR RATE IN VLSI CIRCUITS [J].

SAIHALASZ, GA ;

WORDEMAN, MR ;

DENNARD, RH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :725-731

[7] SOFT ERROR IMPROVEMENT IN MOS RAMS BY THE USE OF EPITAXIAL SUBSTRATE [J].

SATOH, S ;

DENDA, M ;

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FUKUMOTO, T ;

TSUBOUCHI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :143-147

[8] REDUCTION OF ALPHA-PARTICLE SENSITIVITY IN DYNAMIC SEMICONDUCTOR MEMORIES - (16K D-RAMS) BY NEUTRON-IRRADIATION [J].

THOMPSON, CE ;

MEESE, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :3987-3993

[9]

WORDEMAN MR, 1981, IEEE T ELECTRON DEV, V81, P40

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