MEGARAD-RESISTANT 10NM GATE DIELECTRICS

被引：15

作者：

TERRY, FL ^{[1
]}

NAIMAN, ML ^{[1
]}

AUCOIN, RJ ^{[1
]}

SENTURIA, SD ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1981年 / 28卷 / 06期

关键词：

D O I：

10.1109/TNS.1981.4335735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：4389 / 4391

页数：3

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