PICOSECOND LASER-INDUCED ANOMALOUS CRYSTALLIZATION IN AMORPHOUS-SILICON

被引：12

作者：

KANEMITSU, Y

NAKADA, I

KURODA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.95934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：939 / 941

页数：3

共 17 条

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[3] FORMATION OF PERIODIC RIPPLE STRUCTURES IN PICOSECOND PULSED LASER ANNEALING OF ION-IMPLANTED SILICON [J].

KANEMITSU, Y ;

KURODA, H ;

SHIONOYA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (08) :1060-1064

[4] PICOSECOND DYNAMICS OF PULSED LASER ANNEALING OF ION-IMPLANTED SILICON [J].

KANEMITSU, Y ;

KURODA, H ;

SHIONOYA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (05) :618-621

[5]

KANEMITSU Y, 1984, JPN J APPL PHYS 1, V23, P612, DOI 10.1143/JJAP.23.612

[6]

KANEMITSU Y, UNPUB

[7]

Leung K. P., 1984, Shock Waves in Condensed Matter - 1983. Proceedings of the American Physical Society Topical Conference, P343

[8]

LIN PL, 1980, LASER ELECTRON BEAM, P156

[9] PHASE-TRANSFORMATION ON AND CHARGED-PARTICLE EMISSION FROM A SILICON CRYSTAL-SURFACE, INDUCED BY PICOSECOND LASER-PULSES [J].

LIU, JM ;

YEN, R ;

KURZ, H ;

BLOEMBERGEN, N .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :755-757

[10] SIMPLE TECHNIQUE FOR MEASUREMENTS OF PULSED GAUSSIAN-BEAM SPOT SIZES [J].

LIU, JM .

OPTICS LETTERS, 1982, 7 (05) :196-198

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