FORMATION OF PERIODIC RIPPLE STRUCTURES IN PICOSECOND PULSED LASER ANNEALING OF ION-IMPLANTED SILICON

被引：6

作者：

KANEMITSU, Y ^{[1
]}

KURODA, H ^{[1
]}

SHIONOYA, S ^{[1
]}

机构：

[1] NATL LAB HIGH ENERGY PHYS,OHO,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 08期

关键词：

D O I：

10.1143/JJAP.23.1060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1060 / 1064

页数：5

共 17 条

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[8] PICOSECOND DYNAMICS OF PULSED LASER ANNEALING OF ION-IMPLANTED SILICON [J].

KANEMITSU, Y ;

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[9] PERIODIC REGROWTH PHENOMENA PRODUCED BY LASER ANNEALING OF ION-IMPLANTED SILICON [J].

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