GROWTH OF POLYCRYSTALLINE SILICON FILMS ON TITANIUM AND ALUMINUM LAYERS

被引：9

作者：

EPHRATH, LM ^{[1
]}

机构：

[1] BOSTON COLL,DEPT PHYS,CHESTNUT HILL,MA 02167

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1975年 / 4卷 / 06期

关键词：

D O I：

10.1007/BF02660317

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1207 / 1227

页数：21

共 14 条

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[3]

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[4]

EPHRATH LM, 1975, THESIS BOSTON COLLEG

[5]

FANG PH, 1973, NSFRANNSEGI34975PR72

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[7] INTERACTIONS BETWEEN OXYGEN AND ACCEPTOR ELEMENTS IN SILICON [J].

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[8]

HEAPS JD, 1964, DA36039AMC00115E CON

[9] DIFFUSION OF IMPURITIES IN POLYCRYSTALLINE SILICON [J].

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MANOLIU, J ;

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JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) :83-&

[10] STRUCTURE OF CHEMICALLY DEPOSITED POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI ;

CASS, TR .

THIN SOLID FILMS, 1973, 16 (02) :147-165

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