Low-temperature silicon direct bonding and interface behaviours

被引：18

作者：

Jiao, JW

Lu, DR

Xiong, B

Wang, WY

机构：

[1] State Key Laboratories of Transducer Technology, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, 200050

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1995年 / 50卷 / 1-2期

关键词：

low temperature; interface behaviours; bonding mechanism;

D O I：

10.1016/0924-4247(96)80094-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the realization and quality evaluation of low-temperature silicon direct bonding (LTSDB) have been described. Through high-resolution electron microscope (HREM) and secondary ion mass spectroscopy (SIMS) methods, the bonding interface characteristics have been investigated. The interface structure, such as dislocations and random distribution of SiO2, are observed in HREM images. The SIMS results show the distribution near the bonding interface and other properties of Si-H atomic groups. We propose a new two-step LTSDB mechanism.

引用

页码：117 / 120

页数：4

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