2D HOT-ELECTRON TRANSPORT IN A MODULATION-DOPED GAAS/ALGAAS INTERFACE

被引：9

作者：

INOUE, M ^{[1
]}

HIDA, H ^{[1
]}

INAYAMA, M ^{[1
]}

INUISHI, Y ^{[1
]}

NANBU, K ^{[1
]}

HIYAMIZU, S ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90634-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：720 / 722

页数：3

共 14 条

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[9] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .2. LOW-TEMPERATURE MOBILITY PERPENDICULAR TO THE SUPER-LATTICE [J].

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ANDO, T .

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[10] TWO-DIMENSIONAL ELECTRON-TRANSPORT IN SEMICONDUCTOR LAYERS .1. PHONON-SCATTERING [J].

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