PHYSICAL PARAMETERS OF GAINAS/SI3N4 INTERFACE STATES OBTAINED BY THE CONDUCTANCE METHOD

被引：5

作者：

BARRIER, J

BOHER, P

RENAUD, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 13期

关键词：

D O I：

10.1063/1.100666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1192 / 1194

页数：3

共 11 条

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[6]

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[8]

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[9]

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[10] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES [J].

TERMAN, LM .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :285-299

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