INGAAS/SI3N4 INTERFACE OBTAINED IN ULTRAHIGH-VACUUM MULTIPOLAR PLASMA - INSITU CONTROL BY ELLIPSOMETRY AND ELECTRICAL CHARACTERIZATION

被引：19

作者：

BOHER, P

RENAUD, M

LOPEZVILLEGAS, JM

SCHNEIDER, J

CHANE, JP

机构：

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(87)90080-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：100 / 107

页数：8

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