OPTICAL WAVE-GUIDING IN SI/SI1-XGEX/SI HETEROSTRUCTURES

被引：24

作者：

NAMAVAR, F ^{[1
]}

SOREF, RA ^{[1
]}

机构：

[1] USAF,ROME LAB,ERO,BEDFORD,MA 01731

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 06期

关键词：

D O I：

10.1063/1.349276

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Waveguiding at 1.3-mu-m has been observed in a submicrometer strained layer of Si1-xGex sandwiched between a Si capping layer and a Si substrate. This structure is a precursor of the waveguided Si/Si1-xGex/Si heterojunction bipolar transistor. The buried alloy layer, grown by chemical vapor deposition, had a Ge content of either 8% or 18%. The SiGe layer was approximately 1500 angstrom thick beneath a 2-mu-m Si cap. The observed TE0 mode profile agreed with theory.

引用

页码：3370 / 3372

页数：3

共 11 条

[1] WAVEGUIDED ELECTROOPTICAL INTENSITY MODULATION IN A SI/GEXSI1-X/SI HETEROJUNCTION BIPOLAR-TRANSISTOR [J].