TRANSPORT PHENOMENA IN THE CO-BASED ZERO-GAP SEMIMAGNETIC SEMICONDUCTOR - HG1-XCOXSE

被引：14

作者：

AVEROUS, M ^{[1
]}

FAU, C ^{[1
]}

CHARAR, S ^{[1
]}

ELKHOLDI, M ^{[1
]}

RIBES, VD ^{[1
]}

GOLACKI, Z ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.47.10261

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transport experiments are performed on semiconducting compound Hg1-xCoxSe with 0 < x less-than-or-equal-to 0.0087. Two kinds of phenomena are observed: an enhancement of the mobility mu(T) when x increases up to 0.0045, followed by a decrease of mu for x between 0.0045 and 0.0087. This behavior, previously seen in Hg1-xFexSe, could be explained by the energy position of the uppermost occupied cobalt d level in the conduction band. This leads to a resonance effect and a damping of the conduction electrons via the hybridization of the d level with the s conduction band, and which changes mobility. Near the solubility limit (x =0.01), a dip in the mobility curve appears between 10 and 80 K, corresponding to two phase transitions. The dip is probably due to the presence of macroscopic clusters of a cobalt compound, which undergo magnetic phase transitions at these temperatures.

引用

页码：10261 / 10266

页数：6

共 29 条

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