DIELECTRIC PROPERTY OF EPITAXIAL-FILMS OF BATIO3 SYNTHESIZED BY LASER-ABLATION

被引：22

作者：

NOSE, T

KIM, HT

UWE, H

机构：

[1] Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 9B期

关键词：

LASER ABLATION; EPITAXIAL BATIO3 FILM; RELATIVE DIELECTRIC CONSTANT; EPSILON(R); PHASE TRANSITION;

D O I：

10.1143/JJAP.33.5259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial BaTiO3 films have been synthesized on (100)SrTiO3 at the substrate temperature of 700 degrees C and 100 mTorr of oxygen by the method of laser ablation. The surface of the film is found to be flat with a surface roughness of about 7 nm. For the film with the thickness of 2000 Angstrom, the relative dielectric constant, epsilon(r), exhibits a broad peak at about 150 degrees C; on the other hand, the epsilon(r) exhibits a sharp peak at the tetragonal to orthorhombic transition.

引用

收藏

页码：5259 / 5261

页数：3

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