EFFECTS OF GROWTH TEMPERATURE AND SUBSTRATE ORIENTATION ON INCORPORATION OF SI, GE AND SN INTO VAPOR EPITAXIAL GAAS

被引：23

作者：

NAKANISI, T ^{[1
]}

KASIWAGI, M ^{[1
]}

机构：

[1] TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 03期

关键词：

D O I：

10.1143/JJAP.13.484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：484 / 494

页数：11

相关论文

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