DEFECTS IN ELECTRON-IRRADIATED, GALLIUM-DOPED SILICON

[1] MINORITY CARRIER LIFETIME IN ION-IMPLANTED AND ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 17 (03) : 107 - &

[2] DEANGELIS HM, 1972, I PHYS C SER, V16, P295

[3] DREVINSKY PJ, 1982, NASA C PUBLICATION, V2256, P145

[4] EVWARAYE AO, 1978, I PHYS C SER, V46, P267

[5] Kimerling L. C., 1977, International Conference on Radiation Effects in Semiconductors, P221

[6] CAPACITANCE TRANSIENT SPECTROSCOPY [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 377 - 448

[7] DEFECT ENERGY-LEVELS IN BORON-DOPED SILICON IRRADIATED WITH 1-MEV ELECTRONS [J]. PHYSICAL REVIEW B, 1977, 15 (08): : 3836 - 3843

[8] CAPACITANCE TRANSIENT SPECTRA OF PROCESSING-INDUCED AND RADIATION-INDUCED DEFECTS IN SILICON SOLAR-CELLS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) : 419 - 434

[9] RECOMBINATION-ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON [J]. PHYSICAL REVIEW B, 1979, 19 (10): : 5336 - 5348

[10] Watkins G. D., 1965, RAD DAMAGE SEMICONDU, P97

[1] MINORITY CARRIER LIFETIME IN ION-IMPLANTED AND ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 17 (03) : 107 - &

[2] DEANGELIS HM, 1972, I PHYS C SER, V16, P295

[3] DREVINSKY PJ, 1982, NASA C PUBLICATION, V2256, P145

[4] EVWARAYE AO, 1978, I PHYS C SER, V46, P267

[5] Kimerling L. C., 1977, International Conference on Radiation Effects in Semiconductors, P221

[6] CAPACITANCE TRANSIENT SPECTROSCOPY [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 377 - 448

[7] DEFECT ENERGY-LEVELS IN BORON-DOPED SILICON IRRADIATED WITH 1-MEV ELECTRONS [J]. PHYSICAL REVIEW B, 1977, 15 (08): : 3836 - 3843

[8] CAPACITANCE TRANSIENT SPECTRA OF PROCESSING-INDUCED AND RADIATION-INDUCED DEFECTS IN SILICON SOLAR-CELLS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) : 419 - 434

[9] RECOMBINATION-ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON [J]. PHYSICAL REVIEW B, 1979, 19 (10): : 5336 - 5348

[10] Watkins G. D., 1965, RAD DAMAGE SEMICONDU, P97