CHEMICAL BEAM EPITAXY GROWTH OF HIGH-QUALITY INALAS USING TMAA

被引：5

作者：

SHERWIN, ME

MUNNS, GO

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期

关键词：

D O I：

10.1116/1.586095

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAlAs has been grown by chemical beam epitaxy using trimethylamine alane for use in InAlAs/InGaAs and InAlAs/InP high-electron-mobility transistors (HEMTs). Oxygen levels as low as 6 x 10(17) cm-3 have been achieved. Background carrier concentrations are on the order of 2 x 10(14) cm-3, with a best 14-K photoluminescence full width at half-maximum of 18.5 meV. InAlAs/InGaAs submicrometer HEMTs exhibit transconductances as high as 890 mS/mm with a corresponding f(t) of 150 GHz.

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页码：943 / 945

页数：3

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