TIME DECAYS OF DONOR-BOUND EXCITONS IN GAAS UNDER PRESSURE-INDUCED GAMMA-X CROSSOVER

被引:14
作者
MARIETTE, H
WOLFORD, DJ
BRADLEY, JA
机构
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 12期
关键词
D O I
10.1103/PhysRevB.33.8373
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:8373 / 8378
页数:6
相关论文
共 36 条
[1]   DONOR GROUND STATES OF GROUP-IV AND GROUP-III-V SEMICONDUCTORS [J].
ALTARELL.M ;
IADONISI, G .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B, 1971, B 5 (01) :21-&
[2]   THEORY OF OPTICAL-PROPERTIES OF RESONANT STATES IN NITROGEN-DOPED SEMICONDUCTOR ALLOYS [J].
ALTARELLI, M .
PHYSICAL REVIEW B, 1975, 11 (12) :5031-5042
[3]  
[Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2
[4]  
BASSANI F, 1975, ELECTRONIC STATES OP, P244
[5]  
BIR GL, 1971, FIZ TVERD TELA+, V13, P371
[6]  
BRADLEY JA, 1985, B AM PHYS SOC, V30, P508
[7]   DIRECT EXPERIMENTAL-OBSERVATION OF BAND-STRUCTURE EFFECTS IN GAP-XAS-1-X=N ALLOYS BY RADIATIVE LIFETIME MEASUREMENTS [J].
CHEVALLIER, J ;
MARIETTE, H ;
DIGUET, D ;
POIBLAUD, G .
APPLIED PHYSICS LETTERS, 1976, 28 (07) :375-377
[8]   OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J].
DEAN, PJ ;
FAULKNER, RA ;
KIMURA, S ;
ILEGEMS, M .
PHYSICAL REVIEW B, 1971, 4 (06) :1926-&
[9]  
DEXTER DL, 1958, SOLID STATE PHYS, V6, P361
[10]   LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS [J].
HEIM, U ;
HIESINGE.P .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (02) :461-470