DYNAMICS OF RAPID PHASE-TRANSFORMATIONS IN AMORPHOUS GETE INDUCED BY NANOSECOND LASER-PULSES

被引:11
作者
NAKAYOSHI, Y [1 ]
KANEMITSU, Y [1 ]
MASUMOTO, Y [1 ]
MAEDA, Y [1 ]
机构
[1] HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 2B期
关键词
AMORPHOUS GETE; LASER-INDUCED PHASE TRANSFORMATION; SUPERCOOLED LIQUID; TIME-RESOLVED SPECTROSCOPY;
D O I
10.1143/JJAP.31.471
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied laser-induced rapid transformations of GeTe from an amorphous phase to a crystalline phase by means of nanosecond time-resolved optical reflectivity and transmission measurements. Two different processes for crystallization were observed. One of the crystallization processes is that inhomogeneous melting occurs in a laser-heated volume and large grains of crystalline GeTe are formed in the amorphous matrix. The other crystallization occurs at laser fluences well above the melting threshold. The phase transformation from the amorphous to the crystalline phases via a homogeneous liquid phase is triggered by the bulk nucleation in a highly supercooled liquid.
引用
收藏
页码:471 / 475
页数:5
相关论文
共 19 条
[1]   TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].
AUSTON, DH ;
SURKO, CM ;
VENKATESAN, TNC ;
SLUSHER, RE ;
GOLOVCHENKO, JA .
APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440
[2]   AMORPHOUS VERSUS CRYSTALLINE GETE FILMS .2. OPTICAL PROPERTIES [J].
BAHL, SK ;
CHOPRA, KL .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4940-&
[3]   RAPID MELTING AND REGROWTH VELOCITIES IN SILICON HEATED BY ULTRAVIOLET PICOSECOND LASER-PULSES [J].
BUCKSBAUM, PH ;
BOKOR, J .
PHYSICAL REVIEW LETTERS, 1984, 53 (02) :182-185
[4]   REVERSIBILITY AND STABILITY OF TELLURIUM ALLOYS FOR OPTICAL-DATA STORAGE APPLICATIONS [J].
CHEN, M ;
RUBIN, KA ;
MARRELLO, V ;
GERBER, UG ;
JIPSON, VB .
APPLIED PHYSICS LETTERS, 1985, 46 (08) :734-736
[5]   COMPOUND MATERIALS FOR REVERSIBLE, PHASE-CHANGE OPTICAL-DATA STORAGE [J].
CHEN, M ;
RUBIN, KA ;
BARTON, RW .
APPLIED PHYSICS LETTERS, 1986, 49 (09) :502-504
[6]   ULTRAFAST CARRIER RELAXATION IN HYDROGENATED AMORPHOUS-SILICON [J].
FAUCHET, PM ;
HULIN, D .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1989, 6 (05) :1024-1029
[7]   RAPID REVERSIBLE LIGHT-INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORS [J].
FEINLEIB, J ;
DENEUFVILLE, J ;
MOSS, SC ;
OVSHINSKY, SR .
APPLIED PHYSICS LETTERS, 1971, 18 (06) :254-+
[8]   LASER-INDUCED CRYSTALLIZATION OF AMORPHOUS GETE - A TIME-RESOLVED STUDY [J].
HUBER, E ;
MARINERO, EE .
PHYSICAL REVIEW B, 1987, 36 (03) :1595-1604
[9]   PICOSECOND LASER-INDUCED RAPID CRYSTALLIZATION IN AMORPHOUS-SILICON [J].
KANEMITSU, Y ;
KURODA, H ;
NAKADA, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09) :1377-1381
[10]  
Kanemitsu Y., 1985, Oyo Buturi, V54, P1154