PICOSECOND LASER-INDUCED RAPID CRYSTALLIZATION IN AMORPHOUS-SILICON

被引：7

作者：

KANEMITSU, Y ^{[1
]}

KURODA, H ^{[1
]}

NAKADA, I ^{[1
]}

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 09期

关键词：

D O I：

10.1143/JJAP.25.1377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1377 / 1381

页数：5

共 20 条

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[6] PICOSECOND LASER-INDUCED ANOMALOUS CRYSTALLIZATION IN AMORPHOUS-SILICON [J].

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APPLIED PHYSICS LETTERS, 1985, 47 (09) :939-941

[7] ANOMALOUS SURFACE TRANSFORMATIONS IN CRYSTALLINE SILICON INDUCED BY SUBPICOSECOND LASER-PULSES [J].

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[8]

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[9]

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[10] MICROPROBE RAMAN ANALYSIS OF PICOSECOND LASER ANNEALED IMPLANTED SILICON [J].

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