共 17 条
[6]
FORMATION OF PERIODIC RIPPLE STRUCTURES IN PICOSECOND PULSED LASER ANNEALING OF ION-IMPLANTED SILICON
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1984, 23 (08)
:1060-1064
[8]
TEMPORAL CHANGES IN REFLECTIVITY OF CRYSTALLINE SILICON IN PICOSECOND LASER-INDUCED MELTING
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1984, 23 (07)
:940-940
[9]
PICOSECOND DYNAMICS OF PULSED LASER ANNEALING OF ION-IMPLANTED SILICON
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1984, 23 (05)
:618-621
[10]
KANEMITSU Y, 1984, JPN J APPL PHYS 1, V23, P612, DOI 10.1143/JJAP.23.612