NEGATIVE-U PROPERTIES FOR INTERSTITIAL BORON IN SILICON

被引：70

作者：

HARRIS, RD

NEWTON, JL

WATKINS, GD

机构：

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 48卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.48.1271

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1271 / 1274

页数：4

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[11] OXYGEN-RELATED DONOR STATES IN SILICON
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[13] INTERSTITIAL BORON IN SILICON - A NEGATIVE-U SYSTEM
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WATKINS, GD
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[14] DEFECTS IN IRRADIATED SILICON - EPR AND ELECTRON-NUCLEAR DOUBLE-RESONANCE OF INTERSTITIAL BORON
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[15] NEGATIVE-U PROPERTIES FOR POINT-DEFECTS IN SILICON
WATKINS, GD
TROXELL, JR
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (09) : 593 - 596