THE INCORPORATION OF PHOSPHORUS IN AMORPHOUS-SILICON

被引：10

作者：

LEIDICH, D

LINHART, E

NIEMANN, E

GRUENINGER, HW

FISCHER, R

ZEYFANG, RR

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90658-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：613 / 616

页数：4

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[1] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON
ADLER, D
[J]. SOLAR CELLS, 1983, 9 (1-2): : 133 - 148
[2] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON
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[3] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY
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[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320
[4] OBSERVATION OF A REVERSIBLE FIELD-INDUCED DOPING EFFECT IN HYDROGENATED AMORPHOUS-SILICON
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HARBISON, JP
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (06) : 421 - 424
[5] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257
[6] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE
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[J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949
[7] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON
STREET, RA
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (16) : 1187 - 1190