GA(AS,P) STRAINED-LAYER SUPER-LATTICES - A TERNARY SEMICONDUCTOR WITH INDEPENDENTLY ADJUSTABLE BAND-GAP AND LATTICE-CONSTANT

被引：32

作者：

GOURLEY, PL

BIEFELD, RM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582562

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：383 / 386

页数：4

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[11] ELECTRONIC-STRUCTURE OF GAASXP1-X/GAP STRAINED-LAYER SUPER-LATTICES WITH X-LESS-THAN-0.5
OSBOURN, GC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 469 - 472
[12] A GAASXP1-X-GAP STRAINED-LAYER SUPER-LATTICE
OSBOURN, GC
BIEFELD, RM
GOURLEY, PL
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 172 - 174
[13] STRAINED-LAYER SUPER-LATTICES FROM LATTICE MISMATCHED MATERIALS
OSBOURN, GC
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1586 - 1589
[14] OSBOURN GC, UNPUB PHYS REV B
[15] X-RAY DIFFRACTION FROM ONE-DIMENSIONAL SUPERLATTICES IN GAAS1-XPX CRYSTALS
SEGMULLER, A
BLAKESLEE, AE
[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1973, 6 (FEB1): : 19 - 25