CHARACTERIZATION OF MOLYBDENUM DISILICIDE GALLIUM-ARSENIDE SCHOTTKY-BARRIER CONTACTS AT ELEVATED-TEMPERATURES

被引:19
作者
TRUMAN, JK
HOLLOWAY, PH
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1985年 / 3卷 / 03期
关键词
D O I
10.1116/1.573373
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:992 / 995
页数:4
相关论文
共 16 条
[1]   PROPERTIES OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS [J].
CHOW, TP ;
BOWER, DH ;
VANART, RL ;
KATZ, W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) :952-956
[2]  
KAVANAGH KL, COMMUNICATION
[3]  
LEE RE, 1982, 1982 IEEE GAAS INT C, P1777
[4]   HIGH-TEMPERATURE STABLE W-GAAS SCHOTTKY-BARRIER [J].
MATSUMOTO, K ;
HASHIZUME, N ;
TANOUE, H ;
KANAYAMA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06) :L393-L395
[5]  
NAKAMURA H, 1983, ISSCC DIG TECH PAP I, V26, P134
[6]   CHARACTERIZATION OF WSIX/GAAS SCHOTTKY CONTACTS [J].
OHNISHI, T ;
YOKOYAMA, N ;
ONODERA, H ;
SUZUKI, S ;
SHIBATOMI, A .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :600-602
[7]  
REDHEAD RP, 1968, PHYSICAL BASIS ULTRA
[8]  
Rhoderick E H, 1980, METAL SEMICONDUCTOR
[9]  
SZE SM, 1981, PHYSICS SEMICONDUCTO, pCH5
[10]  
TRUMAN JK, 1984, THESIS U FLORIDA