OPTIMAL DEVELOPER SELECTION FOR NEGATIVE ACTING RESISTS

被引：20

作者：

NOVEMBRE, AE

MASAKOWSKI, LM

HARTNEY, MA

机构：

来源：

POLYMER ENGINEERING AND SCIENCE | 1986年 / 26卷 / 16期

关键词：

D O I：

10.1002/pen.760261617

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

引用

页码：1158 / 1164

页数：7

共 12 条

[1] VELOCITY OF DISSOLUTION OF POLYMERS .2. [J].

ASMUSSEN, F ;

UEBERREITER, K .

JOURNAL OF POLYMER SCIENCE, 1962, 57 (165) :199-+

[2]

Barton AFM, 1983, HDB SOLUBILITY PARAM

[3]

BOWDEN MJ, ACS S SER, V266, pCH3

[4]

Hansen C., 1967, J PAINT TECHNOL, V39, P104

[5]

Hansen C. M., 1967, J PAINT TECHNOL, V39, P505

[6] BORON-NITRIDE MASK STRUCTURE FOR X-RAY-LITHOGRAPHY [J].

MAYDAN, D ;

COQUIN, GA ;

LEVINSTEIN, HJ ;

SINHA, AK ;

WANG, DNK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1959-1961

[7] PREPARATION OF X-RAY-LITHOGRAPHY MASKS WITH 0.1 MU-M STRUCTURES [J].

PARRENS, P ;

TABOURET, E ;

TACUSSEL, MC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1965-1967

[8]

TAKAHASHI Y, 1984, SEMICOND INT, V12, P91

[9]

THOMPSON LF, ACS S SER, V219, pCH4

[10]

UEBERREITER K, 1962, J POLYM SCI, V57, P187, DOI 10.1002/pol.1962.1205716515

← 1 2 →