THE EFFECT OF DISLOCATIONS ON THE ELECTRON-MOBILITY OF GAAS

被引：8

作者：

WOOD, J

HOWES, MJ

MORGAN, DV

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 74卷 / 02期

关键词：

D O I：

10.1002/pssa.2210740215

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：493 / 496

页数：4

共 7 条

[1]

GWINNER D, 1979, J PHYSIQUE, V41, P75

[2] DISLOCATION STATES IN GALLIUM-ARSENIDE [J].

JONES, R .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (01) :21-25

[3]

PODOR B, 1967, ACTA PHYS HUNGAR, V33, P393

[4] ELECTRON MOBILITY IN DIRECT-GAP POLAR SEMICONDUCTORS [J].

RODE, DL .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (04) :1012-+

[5] ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS [J].

STILLMAN, GE ;

WOLFE, CM .

WOOD, J ;

HOWES, MJ ;

MORGAN, DV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (01) :207-216

[7]

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