PHOTOMODULATION SPECTROSCOPY OF DEFECTS IN HYDROGENATED AMORPHOUS-SILICON GERMANIUM ALLOYS

被引:5
作者
CHEN, L
TAUC, J
LEE, JK
SCHIFF, EA
机构
[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912
[2] SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
关键词
D O I
10.1016/0022-3093(89)90658-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:585 / 587
页数:3
相关论文
共 13 条
[1]  
ALJISHI S, 1989, IN PRESS MRS SPRING
[2]   ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].
BRODSKY, MH ;
TITLE, RS .
PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&
[3]   DEFECT STATES IN A-SI1-XGEX-H STUDIED BY ELECTRON-SPIN RESONANCE [J].
FINGER, F ;
FUHS, W ;
BECK, G ;
CARIUS, R .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :1015-1018
[4]   DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].
JACKSON, WB ;
AMER, NM .
PHYSICAL REVIEW B, 1982, 25 (08) :5559-5562
[5]   THE ELECTRON-SPIN RESONANCE LINESHAPE IN HYDROGENATED AMORPHOUS-SILICON GERMANIUM ALLOYS [J].
LEE, JK ;
SCHIFF, EA .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :423-425
[6]  
LIN SY, 1985, TETRAHEDRALLY BONDED, P197
[7]   STRUCTURAL, ELECTRICAL, AND OPTICAL-PROPERTIES OF A-SI1-XGEX-H AND AN INFERRED ELECTRONIC BAND-STRUCTURE [J].
MACKENZIE, KD ;
EGGERT, JR ;
LEOPOLD, DJ ;
LI, YM ;
LIN, S ;
PAUL, W .
PHYSICAL REVIEW B, 1985, 31 (04) :2198-2212
[8]  
SMITH ZE, 1989, AMORPHOUS SILICON RE, P409
[9]  
STODDART HA, 1987, THESSI BROWN U
[10]  
Street R., 1984, PHYSICS HYDROGENATED, V2, P195