LOW-TEMPERATURE PLASMA-ENHANCED EPITAXY OF GAAS

被引：24

作者：

PANDE, KP ^{[1
]}

SEABAUGH, AC ^{[1
]}

机构：

[1] NBS,DIV SEMICOND MAT & PROC,WASHINGTON,DC 20234

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 06期

关键词：

D O I：

10.1149/1.2115821

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1357 / 1359

页数：3

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