CARRIER DYNAMICS IN OPTICALLY ILLUMINATED A-SI-H

被引：3

作者：

AOYAGI, Y

KOMURO, S

SEGAWA, Y

NAMBA, S

OKAMOTO, H

HAMAKAWA, Y

机构：

[1] TOYO UNIV,FAC ENGN,KAWAGOE,SAITAMA 350,JAPAN

[2] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90686-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：894 / 896

页数：3

共 7 条

[1] PICOSECOND RELAXATION OF OPTICALLY INDUCED ABSORPTION IN AMORPHOUS-SEMICONDUCTORS [J].

ACKLEY, DE ;

TAUC, J ;

PAUL, W .

PHYSICAL REVIEW LETTERS, 1979, 43 (10) :715-718

[2] DETERMINATION OF DIFFUSION-COEFFICIENTS OF AN EXCITON AND EXCITONIC MOLECULE IN CUCL BY PICOSECOND TRANSIENT GRATING SPECTROSCOPY [J].

AOYAGI, Y ;

SEGAWA, Y ;

NAMBA, S .

PHYSICAL REVIEW B, 1982, 25 (02) :1453-1456

[3] DYNAMIC BEHAVIOR OF THE PHOTODARKENING PROCESS IN AS2S3 CHALCOGENIDE GLASS [J].

AOYAGI, Y ;

SEGAWA, Y ;

NAMBA, S ;

SUHARA, T ;

NISHIHARA, H ;

GAMO, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 67 (02) :669-676

[4] AMORPHOUS-SILICON PHOTODETECTOR FOR PICOSECOND PULSES [J].

AUSTON, DH ;

LAVALLARD, P ;

SOL, N ;

KAPLAN, D .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :66-68

[5] NEW EVIDENCE FOR DEFECT CREATION BY HIGH OPTICAL-EXCITATION IN GLOW-DISCHARGE AMORPHOUS-SILICON [J].

HIRABAYASHI, I ;

MORIGAKI, K ;

NITTA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) :L357-L360

[6] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294

[7] MEASUREMENT OF AUGER RECOMBINATION IN SILICON BY LASER EXCITATION [J].

SVANTESSON, KG ;

NILSSON, NG .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1603-&

← 1 →