INFLUENCE OF ENERGY-TRANSFER IN NUCLEAR COLLISIONS ON THE ION-BEAM ANNEALING OF AMORPHOUS LAYERS IN SILICON

被引：19

作者：

HOLMEN, G

LINNROS, J

SVENSSON, B

机构：

来源：

关键词：

D O I：

10.1063/1.95037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1116 / 1118

页数：3

共 10 条

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CHAPMAN, GE
LAU, SS
TSAUR, BY
MAYER, JW
[J]. PHYSICS LETTERS A, 1979, 71 (2-3) : 267 - 269
[2] RADIATION ENHANCED ANNEALING OF RADIATION-DAMAGE IN GE
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PETERSTROM, S
BUREN, A
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (01): : 45 - 50
[3] RADIATION-DAMAGE IN GE PRODUCED BY NOBLE-GAS IONS INVESTIGATED BY SECONDARY-ELECTRON EMISSION METHOD
HOLMEN, G
HOGBERG, P
BUREN, A
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (01): : 39 - 44
[4] RADIATION-DAMAGE IN GE PRODUCED AND REMOVED BY ENERGETIC GE IONS
HOLMEN, G
BUREN, A
HOGBERG, P
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (01): : 51 - 58
[5] Holmen G., 1972, RADIAT EFF, V12, P77
[6] HOLMEN G, UNPUB
[7] LINNROS J, UNPUB
[8] INSITU SELF ION-BEAM ANNEALING OF DAMAGE IN SI DURING HIGH-ENERGY (0.53 MEV-2.56 MEV) AS+ ION-IMPLANTATION
NAKATA, J
TAKAHASHI, M
KAJIYAMA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : 2211 - 2221
[9] NOVEL LOW-TEMPERATURE RECRYSTALLIZATION OF AMORPHOUS-SILICON BY HIGH-ENERGY ION-BEAM
NAKATA, J
KAJIYAMA, K
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 686 - 688
[10] SVENSSON B, 1983, NUCL INSTRUM METHODS, V210, P755