OXYGEN-RELATED DEFECTS IN IRRADIATED GERMANIUM

被引：21

作者：

FUKUOKA, N

SAITO, H

KAMBE, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 06期

关键词：

D O I：

10.1143/JJAP.22.L353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L353 / L355

页数：3

共 16 条

[1]

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[3] DEFECT STATES IN N-TYPE GERMANIUM IRRADIATED WITH 1.5 MEV ELECTRONS [J].

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[4] RADIATION DEFECTS IN NORMAL-TYPE GERMANIUM STUDIED BY DEEP LEVEL TRANSIENT SPECTROSCOPY [J].

FUKUOKA, N ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) :L519-L522

[5] DEFECTS PRODUCED BY ELECTRON-IRRADIATION AND ANNEALED AT ABOUT 360K IN N-TYPE GERMANIUM [J].

FUKUOKA, N ;

SAITO, H .

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[6] SUBSTITUTION OF IMPURITY ATOMS BY SELF-INTERSTITIALS IN THERMAL-NEUTRON IRRADIATED GERMANIUM [J].

FUKUOKA, N ;

SAITO, H ;

CLELAND, JW .

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[7] ANNEALING OF QUENCHED INTRINSIC-TYPE GERMANIUM [J].

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KAMIURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (05) :762-772

[8] OBSERVATION OF IRRADIATION-INDUCED INTERSTITIAL COPPER IMPURITY IN GERMANIUM [J].

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[9]

LAND DV, 1974, J APPL PHYS, V45, P3014

[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

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