RADIATION DEFECTS IN NORMAL-TYPE GERMANIUM STUDIED BY DEEP LEVEL TRANSIENT SPECTROSCOPY

被引：13

作者：

FUKUOKA, N

SAITO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 07期

关键词：

D O I：

10.1143/JJAP.20.L519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L519 / L522

页数：4

共 13 条

[1]

CURTIS OL, 1961, PHYS REV, V124, P173

[2]

CURTIS OL, 1962, PHYS REV, V126, P134

[3] DLTS MEASUREMENTS OF TRAPPING DEFECTS IN HIGH-PURITY GERMANIUM [J].

EVWARAYE, AO ;

HALL, RN ;

SOLTYS, TJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) :271-275

[4] DEFECTS PRODUCED BY ELECTRON-IRRADIATION AND ANNEALED AT ABOUT 360K IN N-TYPE GERMANIUM [J].

FUKUOKA, N ;

SAITO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (10) :1524-1532

[5] RADIATION-INDUCED DEFECTS IN GERMANIUM SINGLE-CRYSTALS OF HIGH-PURITY [J].

FUKUOKA, N ;

SAITO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (02) :237-242

[6] DEEP LEVEL TRANSIENT SPECTROSCOPY OF HIGH-PURITY GERMANIUM DIODES-DETECTORS [J].

HALLER, EE ;

LI, PP ;

HUBBARD, GS ;

HANSEN, WL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) :265-270

[7]

Kimerling L. C., 1977, RAD EFFECTS SEMICOND, V1976, P221

[8] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION [J].

LANG, DV ;

HENRY, CH .

PHYSICAL REVIEW LETTERS, 1975, 35 (22) :1525-1528

[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[10] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022

← 1 2 →