DEFECTS PRODUCED BY ELECTRON-IRRADIATION AND ANNEALED AT ABOUT 360K IN N-TYPE GERMANIUM

被引：21

作者：

FUKUOKA, N ^{[1
]}

SAITO, H ^{[1
]}

机构：

[1] OSAKA UNIV,COLL GEN EDUC,DEPT PHYS,TOYONAKA,OSAKA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 10期

关键词：

D O I：

10.1143/JJAP.13.1524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1524 / 1532

页数：9

共 10 条

[1]

CRAWFORD JH, 1959, J APPL PHYS, V30, P1204, DOI 10.1063/1.1735294

[2]

EMTZEV VV, 1971, RADIATION EFFECTS SE, P105

[3] EC-O.2EV LEVEL IN IRRADIATED N-TYPE GERMANIUM [J].

FUKUOKA, N ;

CLELAND, JW ;

TATSUMI, Y ;

SAITO, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (01) :283-&

[4]

FUKUOKA N, 1973, RAD DAMAGE DEFECTS S, P328

[5] ANNEALING OF QUENCHED INTRINSIC-TYPE GERMANIUM [J].

HASHIMOTO, F ;

KAMIURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (05) :762-772

[6] INTERACTIONS OF POINT DEFECTS WITH IMPURITIES IN SILICON [J].

HIRATA, M ;

SAITO, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (02) :405-&

[7] IMPURITY DEPENDENCE OF ANNEALING OF GAMMA-RAY IRRADIATED N-TYPE GERMANIUM [J].

NAKAZAWA, F ;

ISHINO, S ;

HIGASHINAKAGAWA, I ;

HASIGUTI, RR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (12) :1895-+

[8]

PIGG JC, 1964, PHYS REV, V135, P1141

[9] ANNEALING OF 60CO-GAMMA-IRRADIATED GERMANIUM [J].

SAITO, H ;

PIGG, JC ;

CRAWFORD, JH .

PHYSICAL REVIEW, 1966, 144 (02) :725-+

[10]

VAVILOV VS, 1971, RAD EFFECTS SEMICOND, P75

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