IMPURITY DEPENDENCE OF ANNEALING OF GAMMA-RAY IRRADIATED N-TYPE GERMANIUM

被引：14

作者：

NAKAZAWA, F

ISHINO, S

HIGASHINAKAGAWA, I

HASIGUTI, RR

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1965年 / 26卷 / 12期

关键词：

D O I：

10.1016/0022-3697(65)90223-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1895 / +

页数：1

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NAKAZAWA, F ;

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[8] LOW-TEMPERATURE ANNEALING STUDIES IN GE [J].

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[9] ANISOTROPIC HALL COEFFICIENTS IN N-TYPE GERMANIUM [J].

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