ANNEALING OF 60CO-GAMMA-IRRADIATED GERMANIUM

被引：23

作者：

SAITO, H

PIGG, JC

CRAWFORD, JH

机构：

来源：

PHYSICAL REVIEW | 1966年 / 144卷 / 02期

关键词：

D O I：

10.1103/PhysRev.144.725

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：725 / +

页数：1

共 22 条

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[3]

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[5]

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[6] RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM .2. ANNEALING IN GAMMA-IRRADIATED, ANTIMONY-, AND ARSENIC-DOPED MATERIAL [J].

CURTIS, OL ;

CRAWFORD, JH .

PHYSICAL REVIEW, 1962, 126 (04) :1342-&

[7]

DEBYE PP, 1954, PHYS REV, V93, P639

[8] MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON [J].

FULLER, CS ;

SEVERIENS, JC .

PHYSICAL REVIEW, 1954, 96 (01) :21-24

[9]

GERASIMO.AB, 1965, FIZ TVERD TELA+, V6, P2544

[10]

GERASIMOV AB, 1964, FIZ TVERD TELA, V6, P3184

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