ON DEPTH PROFILING AN INGAASP-INP HETEROJUNCTION

被引：2

作者：

LANDERS, R

PRINCE, FC

SUNDARAM, VS

PATEL, NB

机构：

来源：

SURFACE AND INTERFACE ANALYSIS | 1983年 / 5卷 / 01期

关键词：

D O I：

10.1002/sia.740050103

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：2 / 3

页数：2

共 5 条

[1] AUGER PROFILE STUDY OF THE INFLUENCE OF LATTICE MISMATCH ON THE LPE INGAASP-INP HETEROJUNCTION INTERFACE [J].

FENG, M ;

COOK, LW ;

TASHIMA, MM ;

STILLMAN, GE ;

BLATTNER, RJ .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :697-699

[2] INTERFACE STUDIES OF ALXGA1-XAS-GAAS HETEROJUNCTIONS [J].

GARNER, CM ;

SU, CY ;

SHEN, YD ;

LEE, CS ;

PEARSON, GL ;

SPICER, WE ;

EDWALL, DD ;

MILLER, D ;

HARRIS, JS .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3383-3389

[3] AUGER DEPTH PROFILING OF INTERFACES IN MOS AND MNOS STRUCTURES [J].

JOHANNESSEN, JS ;

SPICER, WE ;

STRAUSSER, YE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :849-855

[4] 3-LAYER 1.3 MU-M IN1-XGAXASYP1-Y LASERS WITH QUATERNARY CONFINING LAYERS [J].

PRINCE, FC ;

PATEL, NB ;

CHANG, SL ;

BULL, DJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :597-602

[5] DEPTH RESOLUTION DEGRADATION OF SPUTTER-PROFILED INP-INXGA1-XASYP1-Y INTERFACES CAUSED BY CONE FORMATION [J].

WILLIAMS, RS ;

NELSON, RJ ;

SCHLIER, AR .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :827-829

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