NOBLE-METAL SI(111) INTERFACES STUDIED BY MEV ION-SCATTERING

被引:20
作者
ITO, T
GIBSON, WM
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期
关键词
D O I
10.1116/1.572445
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:561 / 565
页数:5
相关论文
共 25 条
[1]   ELECTRONIC-PROPERTIES OF METAL-RICH AU SI COMPOUNDS AND INTERFACES [J].
BISI, O ;
CALANDRA, C ;
BRAICOVICH, L ;
ABBATI, I ;
ROSSI, G ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (22) :4707-4716
[2]   PHOTOEMISSION-STUDIES OF THE SILICON GOLD INTERFACE [J].
BRAICOVICH, L ;
GARNER, CM ;
SKEATH, PR ;
SU, CY ;
CHYE, PW ;
LINDAU, I ;
SPICER, WE .
PHYSICAL REVIEW B, 1979, 20 (12) :5131-5141
[3]  
CROS A, 1981, SURF SCI, V103, pL109, DOI 10.1016/0039-6028(81)90094-7
[4]  
CROS A, 1982, SURF SCI, V116, P1232
[5]  
CROS A, 1981, J PHYS PARIS, V4, P1081
[6]  
CULBERTSON RJ, 1981, PHYS REV LETT, V45, P2045
[7]  
Feldman L. C., 1980, SURFACE SCI RECENT P
[8]   ORBITAL IDENTIFICATION IN INS AND UPS SPECTRA OF CHALCOGENS ADSORBED ON NI(100) [J].
HAGSTRUM, HD ;
BECKER, GE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :369-371
[10]   ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J].
HIRAKI, A ;
SHUTO, K ;
KIM, S ;
KAMMURA, W ;
IWAMI, M .
APPLIED PHYSICS LETTERS, 1977, 31 (09) :611-612