SEMI-INSULATING ELECTRICAL-PROPERTIES OF UNDOPED INP AFTER HEAT-TREATMENT IN A PHOSPHORUS ATMOSPHERE

被引：71

作者：

HOFMANN, D

MULLER, G

STRECKFUSS, N

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 04期

关键词：

D O I：

10.1007/BF00618891

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：315 / 319

页数：5

共 12 条

[1] VAPOR GROWTH OF INP FOR MESFETS
CHEVRIER, J
ARMAND, M
HUBER, AM
LINH, NT
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) : 745 - 761
[2] CLARKE RC, 1979, I PHYS C SER, V45, P19
[3] GOLDSTEIN B, 1969, PHYS REV, V121, P1305
[4] GUHA S, 1976, SOLID STATE ELECTRON, V20, P27
[5] HOFMANN DK, IN PRESS
[6] Klein P. B., 1986, Materials Science Forum, V10-12, P1259, DOI 10.4028/www.scientific.net/MSF.10-12.1259
[7] LAGOWSKI J, 1982, I PHYS C SER, V65, P41
[8] SEMI-INSULATING PROPERTIES OF FE-DOPED INP
MIZUNO, O
WATANABE, H
[J]. ELECTRONICS LETTERS, 1975, 11 (05) : 118 - 119
[9] MULLER G, 1987, E MRS M, V16, P117
[10] TRANSPORT-PROPERTIES AND DEFECTS IN SEMI-INSULATING AND SI-IMPLANTED INP
RHEE, JK
BHATTACHARYA, PK
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (06) : 979 - 1000