LOCALIZED EXCITONS IN CUBIC ZN1-XCDXS LATTICE-MATCHED TO GAAS

被引：49

作者：

KAWAKAMI, Y ^{[1
]}

FUNATO, M ^{[1
]}

FUJITA, S ^{[1
]}

YAMADA, Y ^{[1
]}

MASUMOTO, Y ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST PHYS,TSUKUBA,IBARAKI 305,JAPAN

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.50.14655

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Excitonic properties have been studied in cubic Zn0.42Cd0.58S lattice matched to GaAs. At 2 K, the time-integrated photoluminescence spectrum was composed of single emission peaking at 2.863 eV and its LO-phonon replica. The linewidth of the main peak was 18.5 meV, which fairly well agreed with the theoretical value based on the disorder-induced broadening of exciton luminescence in alloys. In order to assess the emission mechanism, the transient luminescence decay was measured at various emission energies. At the high energy tail (2.883 eV), the luminescence showed exponential decay with a time constant of about 72 ps. On the other hand, the decay time increased with decreasing the detected emission energy. It was about 660 ps at the emission peak (2.863 eV). We interpret these features by means of the model of exciton localization. © 1994 The American Physical Society.

引用

页码：14655 / 14658

页数：4

共 13 条

[1] FLUORESCENCE LINE NARROWING, LOCALIZED EXCITON-STATES, AND SPECTRAL DIFFUSION IN THE MIXED SEMICONDUCTOR CDSXSE1-X [J].