SILICON PLANAR DEVICES USING NITROGEN ION-IMPLANTATION

被引：15

作者：

WADA, Y

ASHIKAWA, M

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

[2] HITACHI LTD,CTR RES & DEV PROMOTION,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 09期

关键词：

D O I：

10.1143/JJAP.15.1725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1725 / 1730

页数：6

共 14 条

[1]

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[2]

APPELS JA, 1971, PHILIPS RES REP, V26, P157

[3]

CARR WN, 1972, MOS LSI DESIGN APPLI

[4] EPITAXIAL SILICON LAYERS GROWN ON ION-IMPLANTED SILICON-NITRIDE LAYERS [J].

DEXTER, RJ ;

PICRAUX, ST ;

WATELSKI, SB .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :455-457

[5] HIGH-PERFORMANCE MOS INTEGRATED-CIRCUIT USING ION-IMPLANTATION TECHNIQUE [J].

FANG, FF ;

RUPPRECHT, HS .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (04) :205-211

[6]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[7]

KAMMINS TI, 1971, J APPL PHYS, V42, P4357

[8]

KOOI E, 1971, PHILIPS RES REP, V26, P166

[9]

KOOI E, TO BE PUBLISHED

[10] IMPLANT DOSE PROFILE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED MOS-TRANSISTORS [J].

KUDOH, O ;

NAKAMURA, K ;

KAMOSHID.M .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4514-4519

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