AES AND SIMS PROFILING OF BURIED SILICIDE LAYERS FORMED BY 6 MEV HIGH-DOSE NICKEL IMPLANTATION INTO SILICON

被引：5

作者：

SCHONBORN, A

LINDNER, JKN

KAAT, EHT

BUBERT, H

GRASSERBAUER, M

FRIEDBACHER, G

机构：

[1] INST SPEKTROCHEM & ANGEW SPEKT,D-4600 DORTMUND 1,FED REP GER

[2] VIENNA TECH UNIV,INST ANALYT CHEM,A-1060 VIENNA,AUSTRIA

来源：

FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE | 1989年 / 333卷 / 4-5期

关键词：

D O I：

10.1007/BF00572365

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：511 / 515

页数：5

共 14 条

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