ATOMIC LAYER EPITAXY

被引：492

作者：

SUNTOLA, T

机构：

[1] Microchemistry Ltd., SF-02151 Espoo

来源：

THIN SOLID FILMS | 1992年 / 216卷 / 01期

关键词：

D O I：

10.1016/0040-6090(92)90874-B

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic layer epitaxy (ALE) is a surface-controlled process for thin film manufacturing, for formation of atomically controlled surfaces and for epitaxial growth of single crystals. It is based on the saturation of individual, sequentially performed surface reactions between the substrate and each of the reactants needed. The saturation mechanism of ALE sequences results in an inherent elimination of pinholes, conformal coating characteristics as well as in a thickness uniformity and homogeneity of the thin films produced. ALE is also an effective tool in a precise construction of superlattices, superalloys, tailored molecular structures and interface layers.

引用

页码：84 / 89

页数：6

共 15 条

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