共 15 条
- [11] Suntola T. S., 1983, U.S. Patent, Patent No. [US4,413,022, 4413022]
- [12] SELF-LIMITING MECHANISM IN THE ATOMIC LAYER EPITAXY OF GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (24) : 1681 - 1683
- [13] TORNQVIST RO, 1982, INT DISPLAY RES C SA, P34
- [14] GAAS ATOMIC LAYER EPITAXY BY HYDRIDE VPE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03): : L212 - L214
- [15] ATOMIC LAYER EPITAXY - A NEW TOOL FOR NOVEL MODULATED SEMICONDUCTOR STRUCTURES [J]. JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 21 - 28