THE EFFECT OF INTERFACE ROUGHNESS ON THE TRANSPORT-PROPERTIES OF A 2-DIMENSIONAL ELECTRON-GAS IN A SI-MOSFET

被引：7

作者：

ZIANNI, X

BUTCHER, PN

机构：

[1] Dept. of Phys., Warwick Univ., Coventry

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1994年 / 6卷 / 14期

关键词：

D O I：

10.1088/0953-8984/6/14/009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The mobility and thermopower of a 2DEG are calculated in order to explain measurements in two Si-MOSFETs. In one of the samples at T < 2 K and for electron densities N(s) > 10(16) m-2, positive thermopowers have been measured. The change of sip in the thermopower is attributed to the dominance of interface roughness scattering. Simultaneous consideration of two transport properties indicates the inadequacy of the current theory of interface roughness to explain electron scattering by interface irregularities in one of the samples. At T > 2 K, thermopower is explained by phonon drag and good agreement is found between theory and experiment.

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页码：2713 / 2726

页数：14

相关论文

共 29 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2] SCREENING EFFECT AND QUANTUM TRANSPORT IN A SILICON INVERSION LAYER IN STRONG MAGNETIC-FIELDS [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) :1616-1626

[3]

BLATT FJ, 1968, PHYSICS ELECTRONIC C

[4]

BUTCHER PN, 1993, PHYSICS LOW DIMENSIO, P95

[5] A CALCULATION OF THE PHONON-DRAG CONTRIBUTION TO THE THERMOPOWER OF QUASI-2D ELECTRONS COUPLED TO 3D PHONONS .1. GENERAL-THEORY [J].

CANTRELL, DG ;

BUTCHER, PN .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (13) :1985-1992

[6] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J].

CHENG, YC ;

SULLIVAN, EA .

SURFACE SCIENCE, 1973, 34 (03) :717-731

[7] ROOM-TEMPERATURE CONDUCTIVITY AND LOCATION OF MOBILE SODIUM IONS IN THERMAL SILICON DIOXIDE LAYER OF A METAL-SILICON DIOXIDE-SILICON STRUCTURE [J].

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) :5149-5151

[8] INFLUENCE OF SURFACE-ROUGHNESS ON THE CONDUCTIVITY OF METALLIC AND SEMICONDUCTING QUASI-2-DIMENSIONAL STRUCTURES [J].

FISHMAN, G ;

CALECKI, D .

PHYSICAL REVIEW B, 1991, 43 (14) :11581-11585

[9]

Gallagher B., 1992, HDB SEMICONDUCTORS, V<bold>1</bold>, P721

[10] THE PHONON DRAG AND DIFFUSION THERMOPOWER OF SI INVERSION-LAYERS [J].

GALLAGHER, BL ;

OXLEY, JP ;

GALLOWAY, T ;

SMITH, MJ ;

BUTCHER, PN .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (03) :755-761