LOW-LOSS HIGH-PURITY GAAS WAVEGUIDES FOR MONOLITHIC INTEGRATED OPTICAL CIRCUITS AT GAAS LASER WAVELENGTHS

被引：19

作者：

STILLMAN, GE ^{[1
]}

WOLFE, CM ^{[1
]}

ROSSI, JA ^{[1
]}

HECKSCHER, H ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 04期

关键词：

D O I：

10.1063/1.88694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：197 / 199

页数：3

相关论文

共 14 条

[1] OPTICAL STRIPLINES FOR INTEGRATED OPTICAL CIRCUITS IN EPITAXIAL GAAS
BLUM, FA
SHAW, DW
HOLTON, WC
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (02) : 116 - 118
[2] BOIS D, 1974, J PHYS PARIS S3, V35, pC3
[3] ANALYTICAL ASPECTS OF ELECTROABSORPTION MODULATORS
BOTTKA, N
HUTCHESON, LD
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2645 - 2649
[4] DYMENT JC, 1975, 5TH P INT S GAAS REL, P200
[5] OPTICAL WAVEGUIDING IN PROTON-IMPLANTED GAAS
GARMIRE, E
STOLL, H
YARIV, A
HUNSPERGER, RG
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (03) : 87 - +
[6] LOW-LOSS OPTICAL-WAVEGUIDES IN SINGLE LAYERS OF GA1-XALXAS
JENSEN, SM
BARNOSKI, MK
HUNSPERGER, RG
KAMATH, GS
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3547 - 3548
[7] EFFECT OF DEFECT FIELDS ON OPTICAL ABSORPTION EDGE
REDFIELD, D
[J]. PHYSICAL REVIEW, 1963, 130 (03): : 916 - &
[8] ELECTROABSORPTION IN ALYGA1-YAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURES
REINHART, FK
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 372 - 374
[9] TRANSMISSION PROPERTIES OF RIB WAVEGUIDES FORMED BY ANODIZATION OF EPITAXIAL GAAS ON ALXGA1-X AS LAYERS
REINHART, FK
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (06) : 270 - 272
[10] HIGH-POWER NARROW-LINEWIDTH OPERATION OF GAAS DIODE LASERS
ROSSI, JA
CHINN, SR
HECKSCHER, H
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (01) : 25 - 27