DIRECT GIGABIT MODULATION OF INJECTION-LASERS - STRUCTURE-DEPENDENT SPEED LIMITATIONS

被引：28

作者：

LINKE, RA ^{[1
]}

机构：

[1] BELL TEL LABS INC,CRAWFORD HILL LAB,LIGHTWAVE SYST RES DEPT,HOLMDEL,NJ 07733

来源：

关键词：

D O I：

10.1109/JLT.1984.1073565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：40 / 43

页数：4

共 18 条

[1] 4 GBIT/S DIRECT MODULATION OF 1.3 MU-M INGAASP/INP SEMICONDUCTOR-LASERS
HAGIMOTO, K
OHTA, N
NAKAGAWA, K
[J]. ELECTRONICS LETTERS, 1982, 18 (18) : 796 - 798
[2] HIGH-SPEED 1.55 MU-M SINGLE-LONGITUDINAL-MODE RIDGE WAVEGUIDE C-3 LASER
KAMINOW, IP
KO, JS
LINKE, RA
STULZ, LW
[J]. ELECTRONICS LETTERS, 1983, 19 (19) : 784 - 785
[3] KAMINOW IP, 1983, IEEE J QUANTUM ELECT, V20
[4] KAMINOW IP, 1983, IEEE J QUANTUM ELECT, V19
[5] KAMINOW IP, 1983, ELECTRON LETT, V19, P785
[6] KRESSEL H, 1977, SEMICONDUCTOR LASERS, P578
[7] KRESSEL H, 1977, SEMICONDUCTOR LASERS, P559
[8] VERY-HIGH-SPEED BACK-ILLUMINATED INGAAS-INP PIN PUNCH-THROUGH PHOTO-DIODES
LEE, TP
BURRUS, CA
OGAWA, K
DENTAI, AG
[J]. ELECTRONICS LETTERS, 1981, 17 (12) : 431 - 432
[9] LINKE RA, 1983, 27TH P SPIE ANN TECH
[10] INGAASP/INP (1.3-MU-M) BURIED-CRESCENT LASERS WITH SEPARATE OPTICAL CONFINEMENT
LOGAN, RA
VANDERZIEL, JP
TEMKIN, H
HENRY, CH
[J]. ELECTRONICS LETTERS, 1982, 18 (20) : 895 - 896