DIRECT GIGABIT MODULATION OF INJECTION-LASERS - STRUCTURE-DEPENDENT SPEED LIMITATIONS

[11] CW ELECTROOPTICAL PROPERTIES OF INGAASP (LAMBDA = 1.3 MU-M) BURIED-HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 202 - 207

[12] LASING PROPERTIES OF INGAASP BURIED HETEROJUNCTION LASERS GROWN ON A MESA SUBSTRATE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 609 - 611

[13] SZE SM, 1969, PHYSICS SEMICONDUCTO

[14] TSANG WT, 1983, APPL PHYS LETT, V42, P650, DOI 10.1063/1.94053

[15] TUCKER RS, UNPUB HIGH FREQUENCY

[16] TUCKER RS, 1983, IEEE T MICROWAVE THE, V31

[17] VANDERZIEL JP, 1983, ELECTRON LETT, V19

[18] WILT DP, 1982, IEEE J QUANTUM ELECT, V18, P1101

[11] CW ELECTROOPTICAL PROPERTIES OF INGAASP (LAMBDA = 1.3 MU-M) BURIED-HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 202 - 207

[12] LASING PROPERTIES OF INGAASP BURIED HETEROJUNCTION LASERS GROWN ON A MESA SUBSTRATE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 609 - 611

[13] SZE SM, 1969, PHYSICS SEMICONDUCTO

[14] TSANG WT, 1983, APPL PHYS LETT, V42, P650, DOI 10.1063/1.94053

[15] TUCKER RS, UNPUB HIGH FREQUENCY

[16] TUCKER RS, 1983, IEEE T MICROWAVE THE, V31

[17] VANDERZIEL JP, 1983, ELECTRON LETT, V19

[18] WILT DP, 1982, IEEE J QUANTUM ELECT, V18, P1101