LASING PROPERTIES OF INGAASP BURIED HETEROJUNCTION LASERS GROWN ON A MESA SUBSTRATE

被引：10

作者：

ORON, M ^{[1
]}

TAMARI, N ^{[1
]}

SHTRIKMAN, H ^{[1
]}

BURRUS, CA ^{[1
]}

机构：

[1] BELL TEL LABS INC,CRAWFORD HILL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 07期

关键词：

D O I：

10.1063/1.93623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：609 / 611

页数：3

共 12 条

[1] Borghini N., UNPUB
[2] VERY LOW THRESHOLD-CURRENT TEMPERATURE SENSITIVITY IN CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS LASERS
BOTEZ, D
CONNOLLY, JC
GILBERT, DB
ETTENBERG, M
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 3840 - 3844
[3] EMBEDDED EPITAXIAL-GROWTH OF LOW-THRESHOLD GAINASP-INP INJECTION-LASERS
CHEN, PC
YU, KL
MARGALIT, S
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 301 - 303
[4] DUTTA NK, 1980, ELECTRON LETT, V16, P654
[5] FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS
HIRAO, M
DOI, A
TSUJI, S
NAKAMURA, M
AIKI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4539 - 4540
[6] ZN-DIFFUSED, STRIPE-GEOMETRY, DOUBLE-HETEROSTRUCTURE GALNASP-INP DIODE-LASERS
HSIEH, JJ
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 694 - 697
[7] TEMPERATURE-DEPENDENCE OF INGAASP DOUBLE-HETEROSTRUCTURE LASER CHARACTERISTICS
NAHORY, RE
POLLOCK, MA
DEWINTER, JC
[J]. ELECTRONICS LETTERS, 1979, 15 (21) : 695 - 696
[8] CW ELECTROOPTICAL PROPERTIES OF INGAASP (LAMBDA = 1.3 MU-M) BURIED-HETEROSTRUCTURE LASERS
NELSON, RJ
WILSON, RB
WRIGHT, PD
BARNES, PA
DUTTA, NK
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 202 - 207
[9] TRANSVERSE-MODE CONTROL IN INGAASP-INP BURIED CRESCENT DIODE-LASERS
OOMURA, E
HIGUCHI, H
HIRANO, R
NAMIZAKI, H
MUROTANI, T
SUSAKI, W
[J]. ELECTRONICS LETTERS, 1981, 17 (02) : 83 - 84
[10] HIGH-T0 LOW-THRESHOLD CRESCENT INGAASP MESA-SUBSTRATE BURIED-HETEROJUNCTION LASERS
TAMARI, N
SHTRIKMAN, H
[J]. ELECTRONICS LETTERS, 1982, 18 (04) : 177 - 178

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