HIGH-T0 LOW-THRESHOLD CRESCENT INGAASP MESA-SUBSTRATE BURIED-HETEROJUNCTION LASERS

被引：5

作者：

TAMARI, N

SHTRIKMAN, H

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 04期

关键词：

D O I：

10.1049/el:19820122

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：177 / 178

页数：2

共 7 条

[1] LOW-THRESHOLD HIGH-T0 CONSTRICTED DOUBLE HETEROJUNCTION AIGAAS DIODE-LASERS [J].

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CONNOLLY, JC .

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[2] LOW THRESHOLD CHANNELLED-SUBSTRATE BURIED CRESCENT INGAASP LASERS EMITTING AT 1.54 MU-M [J].

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SPILLETT, RE ;

STEVENTON, AG .

ELECTRONICS LETTERS, 1981, 17 (18) :651-653

[3] ROOM-TEMPERATURE CW OPERATION OF BURIED-STRIPE DOUBLE-HETEROSTRUCTURE GALNASP/INP DIODE-LASERS [J].

HSIEH, JJ ;

SHEN, CC .

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[4]

KISHINO K, 1979, ELECTRON LETT, V15, P134, DOI 10.1049/el:19790098

[5] TEMPERATURE-DEPENDENCE OF INGAASP DOUBLE-HETEROSTRUCTURE LASER CHARACTERISTICS [J].

NAHORY, RE ;

POLLOCK, MA ;

DEWINTER, JC .

ELECTRONICS LETTERS, 1979, 15 (21) :695-696

[6] CW ELECTROOPTICAL PROPERTIES OF INGAASP (LAMBDA = 1.3 MU-M) BURIED-HETEROSTRUCTURE LASERS [J].

NELSON, RJ ;

WILSON, RB ;

WRIGHT, PD ;

BARNES, PA ;

DUTTA, NK .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :202-207

[7] LOW THRESHOLD CURRENT-DENSITY INGAASP-INP LASERS GROWN IN A VERTICAL LIQUID-PHASE EPITAXIAL SYSTEM [J].

TAMARI, N ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1981, 39 (03) :185-189

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