FOCUSED ION-BEAM LITHOGRAPHY USING AL2O3 AS A RESIST FOR FABRICATION OF X-RAY MASKS

被引：5

作者：

OHTA, T ^{[1
]}

KANAYAMA, T ^{[1
]}

TANOUE, H ^{[1
]}

KOMURO, M ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 01期

关键词：

D O I：

10.1116/1.584702

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：89 / 92

页数：4

共 11 条

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[10] HIGH-RESOLUTION, ION-BEAM PROCESSES FOR MICROSTRUCTURE FABRICATION [J].

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