EFFECT OF LATERAL CURVATURE ON THE BREAKDOWN VOLTAGE OF PLANAR DIODES

被引：19

作者：

BASAVANAGOUD, C

BHAT, KN

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 06期

关键词：

D O I：

10.1109/EDL.1985.26124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：276 / 278

页数：3

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