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EFFECT OF LATERAL CURVATURE ON THE BREAKDOWN VOLTAGE OF PLANAR DIODES
被引:19
作者
:
BASAVANAGOUD, C
论文数:
0
引用数:
0
h-index:
0
BASAVANAGOUD, C
BHAT, KN
论文数:
0
引用数:
0
h-index:
0
BHAT, KN
机构
:
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1985年
/ 6卷
/ 06期
关键词
:
D O I
:
10.1109/EDL.1985.26124
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:276 / 278
页数:3
相关论文
共 5 条
[1]
ANALYTICAL SOLUTIONS FOR THE BREAKDOWN VOLTAGES OF PUNCHED-THROUGH DIODES HAVING CURVED JUNCTION BOUNDARIES AT THE EDGES
[J].
ANANTHARAM, V
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
ANANTHARAM, V
;
BHAT, KN
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
BHAT, KN
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(05)
:939
-945
[2]
BALIGA BJ, 1976, SOLID STATE ELECTRON, V19, P739, DOI 10.1016/0038-1101(76)90152-0
[3]
CALCULATION OF AVALANCHE BREAKDOWN VOLTAGES OF SILICON P-N JUNCTIONS
[J].
FULOP, W
论文数:
0
引用数:
0
h-index:
0
FULOP, W
.
SOLID-STATE ELECTRONICS,
1967,
10
(01)
:39
-&
[4]
EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS
[J].
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
;
GIBBONS, G
论文数:
0
引用数:
0
h-index:
0
GIBBONS, G
.
SOLID-STATE ELECTRONICS,
1966,
9
(09)
:831
-&
[5]
CALCULATION OF DIFFUSION CURVATURE RELATED AVALANCHE BREAKDOWN IN HIGH-VOLTAGE PLANAR P-N-JUNCTIONS
[J].
TEMPLE, VAK
论文数:
0
引用数:
0
h-index:
0
机构:
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
TEMPLE, VAK
;
ADLER, MS
论文数:
0
引用数:
0
h-index:
0
机构:
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
ADLER, MS
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(10)
:910
-916
←
1
→
共 5 条
[1]
ANALYTICAL SOLUTIONS FOR THE BREAKDOWN VOLTAGES OF PUNCHED-THROUGH DIODES HAVING CURVED JUNCTION BOUNDARIES AT THE EDGES
[J].
ANANTHARAM, V
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
ANANTHARAM, V
;
BHAT, KN
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
BHAT, KN
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(05)
:939
-945
[2]
BALIGA BJ, 1976, SOLID STATE ELECTRON, V19, P739, DOI 10.1016/0038-1101(76)90152-0
[3]
CALCULATION OF AVALANCHE BREAKDOWN VOLTAGES OF SILICON P-N JUNCTIONS
[J].
FULOP, W
论文数:
0
引用数:
0
h-index:
0
FULOP, W
.
SOLID-STATE ELECTRONICS,
1967,
10
(01)
:39
-&
[4]
EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS
[J].
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
;
GIBBONS, G
论文数:
0
引用数:
0
h-index:
0
GIBBONS, G
.
SOLID-STATE ELECTRONICS,
1966,
9
(09)
:831
-&
[5]
CALCULATION OF DIFFUSION CURVATURE RELATED AVALANCHE BREAKDOWN IN HIGH-VOLTAGE PLANAR P-N-JUNCTIONS
[J].
TEMPLE, VAK
论文数:
0
引用数:
0
h-index:
0
机构:
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
TEMPLE, VAK
;
ADLER, MS
论文数:
0
引用数:
0
h-index:
0
机构:
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE CORP RES & DEV, SCHENECTADY, NY 12301 USA
ADLER, MS
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(10)
:910
-916
←
1
→